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参数资料
| 型号： | IRF640S |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | TO-263, D2PAK-3 |
| 文件页数： | 1/8页 |
| 文件大小： | 84K |
| 代理商： | IRF640S |
IRF640S
N - CHANNEL 200V - 0.150
- 18A TO-263
MESH OVERLAY
MOSFET
s
TYPICAL RDS(on) = 0.150
s
EXTREMELY HIGH dv/dt CAPABILITY
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using he
company’s consolidated strip layout-based MESH
OVERLAY
process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s
HIGH CURRENT SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY (UPS)
s
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
September 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
VDS
Drain-source Voltage (VGS = 0)
200
V
VDGR
Drain- gate Voltage (RGS =20 k
)
200
V
VGS
G ate-source Volt age
± 20
V
ID
Drain Current (continuous) at Tc =25
oC18
A
ID
Drain Current (continuous) at Tc =100
oC11
A
IDM (
)
Drain Current (pulsed)
72
A
Ptot
T otal Dissipat ion at Tc =25
oC
125
W
Derating Factor
1.0
W /
o C
dv/dt (1)
Peak Diode Recovery voltage slope
5
V/ns
Tstg
Storage Temperature
-65 to 150
o C
Tj
Max. Operating Junction Temperature
150
o C
(
) Pulse width limited by safe operating area
( 1)ISD
≤ 18A, di/dt ≤ 300 A/s, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
TYPE
VDSS
RDS(on)
ID
IRF640S
200 V
< 0.18
18 A
1
3
D
2PAK
TO-263
(suffix ”T4”)
1/8
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相关代理商/技术参数 |
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| IRF640S2470 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRF640S2497 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRF640SPBF | 功能描述:MOSFET N-Chan 200V 18 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF640ST4 | 功能描述:MOSFET N-Ch 200 Volt 18 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF640STRL | 功能描述:MOSFET N-Chan 200V 18 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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