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参数资料
| 型号： | IRF7307 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 194K |
| 代理商： | IRF7307 |
IRF7307
HEXFET Power MOSFET
PD - 9.1242B
8/25/97
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
D1
N -C H AN N EL M O SF ET
P-CH ANNE L M OS FE T
D1
D2
G1
S2
G2
S1
To p V ie w
8
1
2
3
4
5
6
7
SO-8
Description
N-Ch
P-Ch
VDSS
20V
-20V
RDS(on) 0.050 0.090
Max.
N-Channel
P-Channel
ID @ TA = 25°C
10 Sec. Pulse Drain Current, VGS @ 4.5V
5.7
-4.7
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
5.2
-4.3
ID @ TA = 70°C
Continuous Drain Current, VGS @ 4.5V
4.1
-3.4
IDM
Pulsed Drain Current
21
-17
PD @TA = 25°C
Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/°C
VGS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt
5.0
-5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Parameter
Units
A
Absolute Maximum Ratings
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
–––
62.5
°C/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7307HR | 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 20V 5.7A/4.7A 8-Pin SOIC |
| IRF7307PBF | 功能描述:MOSFET 20V DUAL N / P CH 12V VGS MAX RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7307QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7307QPBF_10 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFETPOWERMOSFET |
| IRF7307QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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