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参数资料
| 型号： | IRF7307 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件页数： | 3/10页 |
| 文件大小： | 194K |
| 代理商： | IRF7307 |
IRF7307
Parameter
Min. Typ. Max. Units
Conditions
N-Ch
20
—
VGS = 0V, ID = 250A
P-Ch -20
—
VGS = 0V, ID = -250A
N-Ch
—
0.044 —
Reference to 25°C, ID = 1mA
P-Ch
— -0.012 —
Reference to 25°C, ID = -1mA
—
0.050
VGS = 4.5V, ID = 2.6A
—
0.070
VGS = 2.7V, ID = 2.2A
—
0.090
VGS = -4.5V, ID = -2.2A
—
0.140
VGS = -2.7V, ID = -1.8A
N-Ch 0.70
—
VDS = VGS, ID = 250A
P-Ch -0.70
—
VDS = VGS, ID = -250A
N-Ch 8.30
—
VDS = 15V, ID = 2.6A
P-Ch 4.00
—
VDS = -15V, ID = -2.2A
N-Ch
—
1.0
VDS = 16V, VGS = 0V
P-Ch
—
-1.0
VDS = -16V, VGS = 0V,
N-Ch
—
25
VDS = 16V, VGS = 0V, TJ = 125°C
P-Ch
—
-25
VDS = -16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
N-P
––
—
±100
VGS = ± 12V
N-Ch
—
20
P-Ch
—
22
N-Ch
—
2.2
P-Ch
—
3.3
N-Ch
—
8.0
P-Ch
—
9.0
N-Ch
—
9.0
—
P-Ch
—
8.4
—
N-Ch
—
42
—
P-Ch
—
26
—
N-Ch
—
32
—
P-Ch
—
51
—
N-Ch
—
51
—
P-Ch
—
33
—
LD
Internal Drain Inductace
N-P
—
4.0
—
Between lead tip
LS
Internal Source Inductance
N-P
—
6.0
—
and center of die contact
N-Ch
—
660
—
P-Ch
—
610
—
N-Ch
—
280
—
P-Ch
—
310
—
N-Ch
—
140
—
P-Ch
—
170
—
Parameter
Min. Typ. Max. Units
Conditions
N-Ch
—
2.5
P-Ch
—
-2.5
N-Ch
—
21
P-Ch
—
-17
N-Ch
—
1.0
TJ = 25°C, IS = 1.8A, VGS = 0V
P-Ch
—
-1.0
TJ = 25°C, IS = -1.8A, VGS = 0V
N-Ch
—
29
44
P-Ch
—
56
84
N-Ch
—
22
33
P-Ch
—
71
110
ton
Forward Turn-On Time
N-P
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
Pulse width ≤ 300s; duty cycle ≤ 2%.
Notes:
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Source-Drain Ratings and Characteristics
V
V/°C
V
S
A
nC
ns
nH
pF
N-Channel
ID = 2.6A, VDS = 16V, VGS = 4.5V
P-Channel
ID = -2.2A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 2.6A, RG = 6.0,
RD = 3.8
P-Channel
VDD = -10V, ID = -2.2A, RG = 6.0,
RD = 4.5
N-Channel
VGS = 0V, VDS = 15V, = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, = 1.0MHz
N-Ch
P-Ch
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
TJ = 25°C, IF = 2.6A, di/dt = 100A/s
P-Channel
TJ = 25°C, IF = -2.2A, di/dt = 100A/s
Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
N-Channel I
SD ≤ 2.6A, di/dt ≤ 100A/s, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.2A, di/dt ≤ 50A/s, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Surface mounted on FR-4 board, t ≤ 10sec.
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相关代理商/技术参数 |
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| IRF7307HR | 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 20V 5.7A/4.7A 8-Pin SOIC |
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| IRF7307QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7307QPBF_10 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFETPOWERMOSFET |
| IRF7307QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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