参数资料
型号: IRF730AS
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: JFETs
英文描述: 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: PLASTIC, D2PAK-3
文件页数: 1/11页
文件大小: 309K
代理商: IRF730AS
3/16/04
IRF730AS/LPbF
SMPS MOSFET
HEXFET Power MOSFET
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High speed power switching
l Lead-Free
Benefits
Applications
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
VDSS
Rds(on) max
ID
400V
1.0
5.5A
Typical SMPS Topologies:
l Single Transistor Flyback Xfmr. Reset
l Single Transistor Forward Xfmr. Reset
(Both US Line input only).
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
5.5
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
3.5
A
IDM
Pulsed Drain Current
22
PD @TC = 25°C
Power Dissipation
74
W
Linear Derating Factor
0.6
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
4.6
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
l Effective Coss Specified (See AN1001)
PD-95114
Notes through are on page 10
2
D Pak
TO-262
Document Number: 91046
www.vishay.com
1
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相关代理商/技术参数
参数描述
IRF730AS/LPBF 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET (SMPS MOSFET)
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IRF730ASPBF 功能描述:MOSFET N-Chan 400V 5.5 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF730ASTRL 功能描述:MOSFET N-Chan 400V 5.5 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube