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参数资料
| 型号： | IRF7739L2TRPBF |
| 元件分类： | JFETs |
| 英文描述： | 375 A, 40 V, 0.001 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 |
| 文件页数： | 1/11页 |
| 文件大小： | 260K |
| 代理商： | IRF7739L2TRPBF |
www.irf.com
1
DirectFET
Power MOSFET
Typical values (unless otherwise specified)
PD - 97416A
IRF7739L2TRPbF
IRF7739L2TR1PbF
Applicable DirectFET Outline and Substrate Outline
l RoHS Compliant, Halogen Free
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
l Industrial Qualified
01/26/11
Fig 1. Typical On-Resistance vs. Gate Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.021mH, RG = 25, IAS = 160A.
Notes:
Fig 2. Typical On-Resistance vs. Drain Current
SB
SC
M2
M4
L4
L6
L8
DirectFET
ISOMETRIC
L8
The IRF7739L2TRPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7739L2TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the
device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance power converters.
VDSS
VGS
RDS(on)
40V min ±20V max 0.70m@ 10V
Qg tot
Qgd
Vgs(th)
220nC
81nC
2.8V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
A
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited) f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
g
A
160
375
270
Max.
190
46
1070
±20
40
270
5.0
5.5
6.0
6.5
7.0
7.5
8.0
VGS, Gate -to -Source Voltage (V)
0
2
4
6
8
10
T
yp
ic
al
R
D
S
(o
n)
(m
)
ID = 160A
TJ = 125°C
TJ = 25°C
0
40
80
120
160
200
ID , Drain Current (A)
0.85
0.86
0.87
0.88
0.89
0.90
0.91
0.92
0.93
T
yp
ic
al
R
D
S
(o
n)
(m
)
VGS = 10V
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