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参数资料
| 型号： | IRF7739L2TRPBF |
| 元件分类： | JFETs |
| 英文描述： | 375 A, 40 V, 0.001 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 |
| 文件页数： | 5/11页 |
| 文件大小： | 260K |
| 代理商： | IRF7739L2TRPBF |
IRF7739L2TRPbF/TR1PbF
www.irf.com
3
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple incontact with top (Drain) of part.
Used double sided cooling, mounting pad with large heatsink.
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Rθ is measured at TJ of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
T
he
rm
al
R
es
po
ns
e
(
Z
th
JC
)
°C
/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/Ri
Ci=
τi/Ri
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W)
τi (sec)
0.1080
0.000171
0.6140
0.053914
0.4520
0.006099
1.47e-05
0.036168
Absolute Maximum Ratings
Parameter
Units
PD @TC = 25°C
Power Dissipation
f
W
PD @TC = 100°C
Power Dissipation
f
PD @TA = 25°C
Power Dissipation
c
TP
Peak Soldering Temperature
°C
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
e
–––
40
RθJA
Junction-to-Ambient
j
12.5
–––
RθJA
Junction-to-Ambient
k
20
–––
°C/W
RθJ-Can
Junction-to-Can
fl
–––
1.2
RθJ-PCB
Junction-to-PCB Mounted
–––
0.50
270
-55 to + 175
Max.
3.8
125
63
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