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参数资料
| 型号： | IRF7739L2TRPBF |
| 元件分类： | JFETs |
| 英文描述： | 375 A, 40 V, 0.001 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 |
| 文件页数： | 8/11页 |
| 文件大小： | 260K |
| 代理商： | IRF7739L2TRPBF |
IRF7739L2TRPbF/TR1PbF
6
www.irf.com
Fig 17.
Diode Reverse Recovery Test Circuit for N-Channel HEXFET Power MOSFETs
Fig 15. Typical Avalanche Current vs. Pulsewidth
Fig 16. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 13, 14:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7.
T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC
Iav = 2
DT/ [1.3BVZth]
EAS (AR) = PD (ave)ta
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
di/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
-
+
-
RG
VDD
D.U.T
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
1000
A
va
la
nc
he
C
ur
re
nt
(A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Τj = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
E
A
R
,A
va
la
nc
he
E
ne
rg
y
(m
J)
TOP
Single Pulse
BOTTOM 1.0% Duty Cy cle
ID = 160A
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