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参数资料
| 型号： | IRF730AS |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | JFETs |
| 英文描述： | 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | PLASTIC, D2PAK-3 |
| 文件页数： | 2/11页 |
| 文件大小： | 309K |
| 代理商： | IRF730AS |
IRF730AS/LPbF
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 5.5A, di/dt ≤ 90A/s, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L = 19mH
RG = 25, IAS = 5.5A. (See Figure 12)
Pulse width ≤ 300s; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Uses IRF730A data and test conditions
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
3
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
D2Pak Tape & Reel Infomation
Dimensions are shown in millimeters (inches)
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
03/04
Document Number: 91046
www.vishay.com
10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF730AS/LPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET (SMPS MOSFET) |
| IRF730ASL | 制造商:IRF 制造商全称:International Rectifier 功能描述:SMPS MOSFET |
| IRF730ASLPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET (SMPS MOSFET) |
| IRF730ASPBF | 功能描述:MOSFET N-Chan 400V 5.5 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF730ASTRL | 功能描述:MOSFET N-Chan 400V 5.5 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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