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参数资料
| 型号： | IRF730AS |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | JFETs |
| 英文描述： | 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | PLASTIC, D2PAK-3 |
| 文件页数： | 6/11页 |
| 文件大小： | 309K |
| 代理商： | IRF730AS |
IRF730AS/LPbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
10
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
= 150 C
= 25 C
°
J
C
V
, Drain-to-Source Voltage (V)
I
,Dr
ai
nCur
rent
(
A
)
I
,Dr
ai
nCur
rent
(
A
)
DS
D
10us
100us
1ms
10ms
0
5
10
15
20
25
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
,Gate-to-Source
Voltage
(V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
5.9A
V
= 80V
DS
V
= 200V
DS
V
= 320V
DS
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
V
,Source-to-Drain Voltage (V)
I
,
R
ever
se
D
rai
nC
ur
rent
(
A
)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
5.5
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
100000
C
,
C
ap
ac
ita
nc
e(
pF
)
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
Document Number: 91046
www.vishay.com
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF730AS/LPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET (SMPS MOSFET) |
| IRF730ASL | 制造商:IRF 制造商全称:International Rectifier 功能描述:SMPS MOSFET |
| IRF730ASLPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET (SMPS MOSFET) |
| IRF730ASPBF | 功能描述:MOSFET N-Chan 400V 5.5 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF730ASTRL | 功能描述:MOSFET N-Chan 400V 5.5 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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