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参数资料
| 型号： | IRF6610TRPBF |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 20 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, ISOMETRIC-2 |
| 文件页数： | 1/10页 |
| 文件大小： | 242K |
| 代理商： | IRF6610TRPBF |
www.irf.com
1
05/31/06
IRF6610PbF
IRF6610TRPbF
DirectFET Power MOSFET
PD - 97220
Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.18mH, RG = 25, IAS = 12A.
Notes:
SQ
SX
ST
MQ
MX
MT
MP
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
0
5
10
15
20
25
30
T
yp
ic
al
R
D
S
(o
n)
(m
)
ID = 15A
TJ = 25°C
TJ = 125°C
VDSS
VGS
RDS(on)
20V max ±20V max 5.2m
@ 10V 8.2m@ 4.5V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
EAS
Single Pulse Avalanche Energy
mJ
IAR
Avalanche Current
A
12
Max.
12
66
120
±20
20
15
13
0
2
4
6
8
10
12
14
16
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
,G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(V
)
VDS= 16V
VDS= 10V
ID= 12A
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC
3.6nC
1.3nC
6.4nC
5.9nC
2.1V
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Profile (<0.7mm)
DirectFET ISOMETRIC
SQ
Description
The IRF6610PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6610PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6610PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
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