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参数资料
| 型号： | IRF6610TRPBF |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 20 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, ISOMETRIC-2 |
| 文件页数： | 5/10页 |
| 文件大小： | 242K |
| 代理商： | IRF6610TRPBF |
IRF6610PbF
4
www.irf.com
Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance Vs.
Drain Current and Gate Voltage
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM
2.5V
≤60s PULSE WIDTH
Tj = 25°C
2.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
2.5V
≤60s PULSE WIDTH
Tj = 150°C
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM
2.5V
1
2
3
4
5
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(Α
)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VDS = 10V
≤60s PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
T
yp
ic
al
R
D
S
(o
n)
(N
or
m
al
iz
ed
)
ID = 15A
VGS = 10V
VGS = 4.5V
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C
,C
ap
ac
ita
nc
e(
pF
)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
20
40
60
80
100
120
140
ID, Drain Current (A)
0
10
20
30
40
T
yp
ic
al
R
D
S
(o
n)
(m
)
TJ = 25°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
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