- 您现在的位置：买卖IC网 > PDF目录175864 > IRF6610TRPBF 15 A, 20 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | IRF6610TRPBF |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 20 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, ISOMETRIC-2 |
| 文件页数： | 4/10页 |
| 文件大小： | 242K |
| 代理商： | IRF6610TRPBF |
IRF6610PbF
www.irf.com
3
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
T
he
rm
al
R
es
po
ns
e
(
Z
th
JA
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W)
τi (sec)
1.6195
0.000126
2.14056
0.001354
22.2887
0.375850
20.0457
7.41
11.9144
99
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci=
τi/Ri
Ci=
τi/Ri
τ
4
τ
4
R
4
R
4
τ
A
τ
A
τ
5
τ
5
R
5
R
5
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
Rθ is measured at TJ of approximately 90°C.
Absolute Maximum Ratings
Parameter
Units
PD @TA = 25°C
Power Dissipation
W
PD @TA = 70°C
Power Dissipation
PD @TC = 25°C
Power Dissipation
TP
Peak Soldering Temperature
°C
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
–––
58
RθJA
Junction-to-Ambient
12.5
–––
RθJA
Junction-to-Ambient
20
–––
°C/W
RθJC
Junction-to-Case
–––
3.0
RθJ-PCB
Junction-to-PCB Mounted
1.4
–––
Linear Derating Factor
W/°C
0.017
270
-40 to + 150
Max.
42
2.2
1.4
相关PDF资料 |
PDF描述 |
|---|---|
| IRF720 | TRI CON SKT 20-22 GLD ST/LO |
| IRF7307 | Power MOSFET |
| IRF730AS | 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| IRF7450 | SMPS MOSFET |
| IRF7739L2TRPBF | 375 A, 40 V, 0.001 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF6611 | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6611PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6611TR1 | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6611TR1 | 制造商:International Rectifier 功能描述:MOSFET Transistor Power Dissipation:2.8W |
| IRF6611TR1PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。