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参数资料
| 型号： | IRF6610TRPBF |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 20 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, ISOMETRIC-2 |
| 文件页数： | 3/10页 |
| 文件大小： | 242K |
| 代理商： | IRF6610TRPBF |
IRF6610PbF
2
www.irf.com
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤ 400s; duty cycle ≤ 2%.
Notes:
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
20
–––
V
ΒVDSS/TJ
Breakdown Voltage Temp. Coefficient
–––
15
––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
5.2
6.8
m
–––
8.2
10.7
VGS(th)
Gate Threshold Voltage
1.65
2.1
2.55
V
VGS(th)/TJ
Gate Threshold Voltage Coefficient
–––
-5.2
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
1.0
A
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
gfs
Forward Transconductance
41
–––
S
Qg
Total Gate Charge
–––
11
17
Qgs1
Pre-Vth Gate-to-Source Charge
–––
3.9
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.3
–––
nC
Qgd
Gate-to-Drain Charge
–––
3.6
–––
Qgodr
Gate Charge Overdrive
–––
2.4
–––
See Fig. 15
Qsw
Switch Charge (Qgs2 + Qgd)
–––
4.9
–––
Qoss
Output Charge
–––
5.9
–––
nC
RG
Gate Resistance
–––
2.0
–––
td(on)
Turn-On Delay Time
–––
12
–––
tr
Rise Time
–––
51
–––
td(off)
Turn-Off Delay Time
–––
15
–––
ns
tf
Fall Time
–––
5.7
–––
Ciss
Input Capacitance
–––
1520
–––
Coss
Output Capacitance
–––
440
–––
pF
Crss
Reverse Transfer Capacitance
–––
220
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
2.8
(Body Diode)
A
ISM
Pulsed Source Current
–––
120
(Body Diode)
VSD
Diode Forward Voltage
–––
1.0
V
trr
Reverse Recovery Time
–––
12
18
ns
Qrr
Reverse Recovery Charge
–––
2.4
3.6
nC
MOSFET symbol
Clamped Inductive Load
VDS = 10V, ID = 12A
Conditions
See Fig. 16 & 17
= 1.0MHz
VDS = 10V, VGS = 0V
VGS = 20V
VGS = -20V
VDS = 16V, VGS = 0V
VDS = 10V
VDS = 16V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250A
TJ = 25°C, IF = 12A
VGS = 4.5V
ID = 12A
VGS = 0V
VDS = 10V
ID = 12A
VDD = 16V, VGS = 4.5V
di/dt = 100A/s
See Fig. 18
TJ = 25°C, IS = 12A, VGS = 0V
showing the
integral reverse
p-n junction diode.
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