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参数资料
| 型号： | IRF6665 |
| 厂商： | International Rectifier |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V DIRECTFET-SH |
| 产品变化通告： | (PMD) Leaded Parts Discontinuation 25/May/2012 |
| 标准包装： | 4,800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 62 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 530pF @ 25V |
| 功率 - 最大： | 2.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DirectFET? 等容 SH |
| 供应商设备封装： | DIRECTFET? SH |
| 包装： | 带卷 (TR) |
DIGITAL AUDIO MOSFET
PD - 96900C
IRF6665
Features
? Latest MOSFET Silicon technology
? Key parameters optimized for Class-D audio amplifier
applications
? Low R DS(on) for improved efficiency
? Low Q g for better THD and improved efficiency
? Low Q rr for better THD and lower EMI
? Low package stray inductance for reduced ringing and lower
EMI
? Can deliver up to 100W per channel into 8 ? with no heatsink ?
? Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
Key Parameters
V DS 100
R DS(on) typ. @ V GS = 10V 53
Q g typ. 8.7
R G(int) typ. 1.9
V
m :
nC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SH
DirectFET ? ISOMETRIC
SQ
SX
ST
SH
MQ
MX
MT
MN
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6665 device utilizes DirectFET TM packaging technology. DirectFET TM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET TM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFET TM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T C = 25°C
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T C = 25°C
P D @T A = 25°C
P D @T A = 70°C
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
100
± 20
19
4.2
3.4
34
42
2.2
1.4
0.017
-40 to + 150
V
A
W
W/°C
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JA
R θ JA
R θ JA
R θ JC
R θ J-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
–––
12.5
20
–––
1.4
58
–––
–––
3.0
–––
°C/W
Notes ? through ? are on page 2
www.irf.com
1
11/16/05
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相关代理商/技术参数 |
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|---|---|
| IRF6665PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:Latest MOSFET Silicon technology |
| IRF6665TR1 | 功能描述:MOSFET DIGITAL AUDIO 100V 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6665TR1PBF | 功能描述:MOSFET MOSFT 100V 62mOhm 19A 8.7nC Qg for Aud RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6665TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6665TRPBF | 功能描述:MOSFET DIGITAL AUDIO 100V 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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