参数资料
型号: IRF6691TR1
厂商: International Rectifier
文件页数: 2/12页
文件大小: 0K
描述: MOSFET N-CH 20V 32A DIRECTFET
其它有关文件: DirectFET MOSFET 4Ps Checklist
标准包装: 1,000
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 32A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.8 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 71nC @ 4.5V
输入电容 (Ciss) @ Vds: 6580pF @ 10V
功率 - 最大: 2.8W
安装类型: 表面贴装
封装/外壳: DirectFET? 等容 MT
供应商设备封装: DIRECTFET? MT
包装: 带卷 (TR)
IRF6691
Static @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
V GS = 0V, I D = 1.0mA
m ?
?Β V DSS / ? T J
R DS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
–––
12
1.8
1.2
–––
2.5
1.8
mV/°C Reference to 25°C, I D = 10mA
V GS = 4.5V, I D = 12A
V GS = 10V, I D = 15A
V GS(th)
Gate Threshold Voltage
1.6
–––
2.5
V
V DS = V GS , I D = 250μA
? V GS(th) / ? T J
Gate Threshold Voltage Coefficient
–––
–––
-4.1
–––
–––
1.4
mV/°C I D = 10mA, reference to 25°C
mA
V DS = 20V, V GS = 0V
I DSS
I GSS
gfs
Q g
Q gs1
Q gs2
Q gd
Q godr
Q sw
Q oss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q gs2 + Q gd )
Output Charge
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
47
14
4.4
15
14
19
30
500
5
100
-100
–––
71
–––
–––
–––
–––
–––
–––
μA
mA
nA
S
nC
nC
V DS = 16V, V GS = 0V
V DS = 16V, V GS = 0V, T J = 125°C
V GS = 12V
V GS = -12V
V DS = 10V, I D = 26A
V DS = 10V
V GS = 4.5V
I D = 17A
See Fig. 17
V DS = 10V, V GS = 0V
R G
t d(on)
Gate Resistance
Turn-On Delay Time
–––
–––
0.60
23
1.5
–––
?
V DD = 16V, V GS = 4.5V
t r
t d(off)
t f
C iss
C oss
C rss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
95
25
10
6580
2070
840
–––
–––
–––
–––
–––
–––
ns
pF
I D = 26A
Clamped Inductive Load
V GS = 0V
V DS = 10V
? = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
Max.
Units
E AS
I AR
Single Pulse Avalanche Energy
Avalanche Current
–––
–––
230
26
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
Continuous Source Current
–––
–––
200
MOSFET symbol
D
(Body Diode)
A
showing the
I SM
Pulsed Source Current
–––
–––
260
integral reverse
G
(Body Diode)
p-n junction diode.
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
32
26
0.65
48
39
V
ns
nC
T J = 25°C, I S = 25A, V GS = 0V
T J = 25°C, I F = 25A
di/dt = 100A/μs
2
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