参数资料
型号: IRF7319
厂商: International Rectifier
英文描述: HEXFET?? Power MOSFET
中文描述: 的HEXFET??功率MOSFET
文件页数: 7/10页
文件大小: 137K
代理商: IRF7319
IRF7319
Fig 16.
Normalized On-Resistance
Vs. Temperature
Fig 19.
Maximum Avalanche Energy
Vs. Drain Current
Fig 17.
Typical On-Resistance Vs. Drain
Current
Fig 18.
Typical On-Resistance Vs. Gate
Voltage
P-Channel
R
D
)
)
R
D
)
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R
(
D
V
=
I
=
GS
D
10V
4.9A
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
-I
D
, Drain Current (A)
20
30
A
V = -4.5V
V = -10V
0.00
0.04
0.08
0.12
0.16
0
3
6
9
12
15
A
I = -4.9A
25
50
75
100
125
150
0
50
100
150
200
250
300
Starting T , Junction Temperature
( C)
E
A
ID
TOP
BOTTOM
-1.3A
-2.2A
-2.8A
-V
GS
, Gate -to-Source Voltage (V)
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