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参数资料
| 型号： | IRF7326D2 |
| 厂商： | International Rectifier |
| 英文描述： | FETKY MOSFET / Schottky Diode |
| 中文描述： | FETKY MOSFET的/肖特基二极管 |
| 文件页数： | 1/8页 |
| 文件大小： | 116K |
| 代理商： | IRF7326D2 |
www.irf.com
1
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Maximum
-3.6
-2.9
-29
2.0
1.3
16
± 20
-5.0
-55 to +150
Units
A
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
W
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
mW/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
Thermal Resistance Ratings
G
Co-packaged HEXFET
Power MOSFET
and Schottky Diode
G
Ideal For Buck Regulator Applications
G
P-Channel HEXFET
G
Low V
F
Schottky Rectifier
G
Generation 5 Technology
G
SO-8 Footprint
IRF7326D2
PD - 93763
FETKY
MOSFET / Schottky Diode
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
I
SD
≤
-1.8A, di/dt
≤
-90A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%
Surface mounted on FR-4 board, t
≤
10sec.
Parameter
R
θ
JA
Maximum
62.5
Units
°C/W
Junction-to-Ambient
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise noted)
Description
The
FETKY
family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
V
DSS
= -30V
R
DS(on)
= 0.10
Schottky Vf = 0.52V
Top View
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
SO-8
8/19/99
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7326D2PBF | 功能描述:MOSFET FETKY 30V VBRD 7.7mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7326D2TR | 功能描述:MOSFET P-CH 30V 3.6A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:FETKY™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF7326D2TRPBF | 功能描述:MOSFET MOSFT PCh w/Schttky -3.6A 100mOhm 16.7nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7328 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF7328HR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 8A 8-Pin SOIC |
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