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参数资料
| 型号： | IRF7326D2 |
| 厂商： | International Rectifier |
| 英文描述： | FETKY MOSFET / Schottky Diode |
| 中文描述： | FETKY MOSFET的/肖特基二极管 |
| 文件页数： | 2/8页 |
| 文件大小： | 116K |
| 代理商： | IRF7326D2 |
IRF7326D2
2
www.irf.com
Parameter
V
(BR)DSS
R
DS(on)
Min. Typ. Max. Units
-30
—
—
0.073 0.10
—
0.13
-1.0
—
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
11
—
17
—
25
—
18
—
440
—
200
—
93
Conditions
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
—
V
V
GS
= 0V, I
D
= -250μA
V
GS
= -10V, I
D
= -1.8A
V
GS
= -4.5V, I
D
= -1.5A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -24V, I
D
= -1.8A
V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 55°C
V
GS
= -20V
V
GS
= 20V
I
D
= -1.8A
V
DS
= -24V
V
GS
= -10V (see figure 6)
V
DD
= -15V
I
D
= -1.8A
R
G
= 6.0
R
D
= 8.2
V
GS
= 0V
V
DS
= -25V
= 1.0MHz (see figure 5)
0.16
—
—
-1.0
-25
100
-100
25
2.9
9.0
—
—
—
—
—
—
—
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
V
S
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
MOSFET Source-Drain Ratings and Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
μA
nA
ns
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Schottky Diode Maximum Ratings
Min. Typ.
Max.
-2.5
-29
-1.0
80
99
Units
A
Conditions
Continuous Source Current (Body Diode) —
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
—
—
—
53
66
—
—
—
—
V
ns
nC
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.8A
di/dt = 100A/μs
Parameter
Max. Units
2.8
1.8
200
20
Conditions
If (av)
Max. Average Forward Current
50% Duty Cycle. Rectangular Wave, Tc = 25°C
50% Duty Cycle. Rectangular Wave, Tc = 70°C
5μs sine or 3μs Rect. pulse
10ms sine or 6ms Rect. pulse load condition &
I
SM
Max. peak one cycle Non-repetitive
Surge current
Following any rated
with Vrrm applied
A
A
Parameter
Max. Units
0.57
0.77
0.52
0.79
0.30
37
310
4900 V/μs Rated Vr
Conditions
Vfm
Max. Forward voltage drop
If = 3.0, Tj = 25°C
If = 6.0, Tj = 25°C
If = 3.0, Tj = 125°C
If = 6.0, Tj = 125°C
Vr = 30V
mA
.
Irm
Max. Reverse Leakage current
Tj = 25°C
Tj = 125°C
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
pF
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Schottky Diode Electrical Specifications
V
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
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相关代理商/技术参数 |
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| IRF7326D2PBF | 功能描述:MOSFET FETKY 30V VBRD 7.7mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7326D2TR | 功能描述:MOSFET P-CH 30V 3.6A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:FETKY™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF7326D2TRPBF | 功能描述:MOSFET MOSFT PCh w/Schttky -3.6A 100mOhm 16.7nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7328 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF7328HR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 8A 8-Pin SOIC |
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