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参数资料
| 型号： | IRF7342 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件页数： | 1/7页 |
| 文件大小： | 136K |
| 代理商： | IRF7342 |
HEXFET
Power MOSFET
PD -91859
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
2/24/99
Description
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual P-Channel Mosfet
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
SO-8
V
DSS
= -55V
R
DS(on)
= 0.105
IRF7342
www.irf.com
1
Parameter
Max.
-55
-3.4
-2.7
-27
2.0
1.3
0.016
± 20
30
114
5.0
Units
V
V
DS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10μs
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
A
W/°C
V
V
V
GS
V
GSM
E
AS
dv/dt
T
J,
T
STG
V/ns
°C
-55 to + 150
Parameter
Typ.
–––
Max.
62.5
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
Thermal Resistance
W
D1
D1
D2
D2
G1
S2
G 2
S1
Top View
8
1
2
3
4
5
6
7
相关PDF资料 |
PDF描述 |
|---|---|
| IRF7343PBF | HEXFET Power MOSFET |
| IRF7350 | Power MOSFET(Vdss=+-100V) |
| IRF7353D1 | 30V N-Channel PowerTrench MOSFET |
| IRF7353D2 | 30V N-Channel PowerTrench MOSFET |
| IRF7379 | Power MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7342D2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:-55V FETKY - MOSFET and Schottky Diode in a SO-8 package |
| IRF7342D2HR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 3.4A 8-Pin SOIC |
| IRF7342D2PBF | 功能描述:MOSFET MOSFT PCh w/Schttky -3.4A 105mOhm 26nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7342D2PBF | 制造商:International Rectifier 功能描述:MOSFET With Schottky Diode |
| IRF7342D2TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 3.4A 8-Pin SOIC T/R |
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