参数资料
型号: IRF7342
厂商: International Rectifier
英文描述: Power MOSFET
中文描述: 功率MOSFET
文件页数: 4/7页
文件大小: 136K
代理商: IRF7342
IRF7342
4
www.irf.com
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 8.
Maximum Avalanche Energy
Vs. Drain Current
Fig 6.
Typical On-Resistance Vs. Drain
Current
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
0
2
4
6
8
10
12
0.080
0.120
0.160
0.200
0.240
R
-I , Drain Current (A)
D
VGS = -4.5V
VGS = -10V
)
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R
(
D
V
=
I =
GS
-10V
-3.4 A
25
50
75
100
125
150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E
ID
TOP
BOTTOM
-1.5A
-2.7A
-3.4A
R
D
0.05
0.15
0.25
0.35
0.45
2
5
8
11
14
A
-V , Gate-to-Source Voltage (V)
I = -3.4 A
相关PDF资料
PDF描述
IRF7343PBF HEXFET Power MOSFET
IRF7350 Power MOSFET(Vdss=+-100V)
IRF7353D1 30V N-Channel PowerTrench MOSFET
IRF7353D2 30V N-Channel PowerTrench MOSFET
IRF7379 Power MOSFET
相关代理商/技术参数
参数描述
IRF7342D2 制造商:未知厂家 制造商全称:未知厂家 功能描述:-55V FETKY - MOSFET and Schottky Diode in a SO-8 package
IRF7342D2HR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 3.4A 8-Pin SOIC
IRF7342D2PBF 功能描述:MOSFET MOSFT PCh w/Schttky -3.4A 105mOhm 26nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7342D2PBF 制造商:International Rectifier 功能描述:MOSFET With Schottky Diode
IRF7342D2TRHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 3.4A 8-Pin SOIC T/R