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参数资料
| 型号： | IRF7342 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件页数： | 2/7页 |
| 文件大小： | 136K |
| 代理商： | IRF7342 |
IRF7342
2
www.irf.com
Parameter
Min. Typ. Max. Units
-55
–––
––– -0.054 –––
––– 0.095 0.105
––– 0.150 0.170
-1.0
–––
3.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
26
–––
3.0
–––
8.4
–––
14
–––
10
–––
43
–––
22
–––
690
–––
210
–––
86
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -3.4A
V
GS
= -4.5V, I
D
= -2.7A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -10V, I
D
= -3.1A
V
DS
= -55V, V
GS
= 0V
V
DS
= -55V, V
GS
= 0V, T
J
= 55°C
V
GS
= -20V
V
GS
= 20V
I
D
= -3.1A
V
DS
= -44V
V
GS
= -10V, See Fig. 10
V
DD
= -28V
I
D
= -1.0A
R
G
= 6.0
R
D
= 16
,
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 9
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
-2.0
-25
-100
100
38
4.5
13
22
15
64
32
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
μA
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.0A
di/dt = -100A/μs
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
54
85
-1.2
80
130
V
ns
nC
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
-27
-2.0
A
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
-3.4A, di/dt
≤
-150A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
Starting T
J
= 25°C, L = 20mH
R
G
= 25
, I
AS
= -3.4A. (See Figure 8)
When mounted on 1 inch square copper board, t<10 sec
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|---|---|
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| IRF7342D2PBF | 功能描述:MOSFET MOSFT PCh w/Schttky -3.4A 105mOhm 26nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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