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参数资料
型号： IRF7324D1
厂商： International Rectifier
英文描述： FETKY MOSFET / Schottky Diode
中文描述： FETKY MOSFET的/肖特基二极管
文件页数： 2/8页
文件大小： 164K
代理商： IRF7324D1
IRF7324D1
2
www.irf.com
Parameter
V
(BR)DSS
R
DS(on)
Min. Typ. Max. Units
-20
—
—
0.070 0.180
—
0.115 0.375
-0.70
—
4.0
—
—
—
—
—
—
—
—
—
—
15
—
2.2
—
6.0
—
8.4
—
26
—
51
—
33
—
610
—
310
—
170
Conditions
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
—
V
V
GS
= 0V, I
D
= -250μA
V
GS
= -4.5V, I
D
= -2.9A
V
GS
= -2.7V, I
D
= -2.5A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -16V, I
D
= -2.2A
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
V
GS
= -12V
V
GS
= 12V
I
D
= -2.2A
V
DS
= -16V
V
GS
= -4.5V (see figure 10)
V
DD
= -10V
I
D
= -2.2A
R
G
= 6.0
R
D
= 4.5
V
GS
= 0V
V
DS
= -15V
= 1.0MHz (see figure 9)
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
—
—
-1.0
-25
-100
100
22
3.3
9.0
—
—
—
—
—
—
—
V
S
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
MOSFET Source-Drain Ratings and Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
μA
nA
ns
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Min. Typ. Max.
—
—
—
—
—
—
—
43
—
44
Units
A
Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
-2.0
-23
-1.2
65
66
V
ns
nC
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.3A
di/dt = 100A/μs
Parameter
Max. Units.
1.7
1.2
120
11
Conditions
I
F(av)
Max. Average Forward Current
50% Duty Cycle. Rectangular Wave, T
A
= 25°C
T
A
= 70°C
Following any rated
I
SM
Max. peak one cycle Non-repetitive
Surge current
5μs sine or 3μs Rect. pulse
10ms sine or 6ms Rect. pulse load condition &
with V
RRM
applied
A
A
Schottky Diode Maximum Ratings
Parameter
Max. Units
0.50
0.62
0.39
0.57
0.05
10
92
3600 V/ μs Rated V
R
Conditions
V
FM
Max. Forward voltage drop
I
F
= 1.0A, T
J
= 25°C
I
F
= 2.0A, T
J
= 25°C
I
F
= 1.0A, T
J
= 125°C
I
F
= 2.0A, T
J
= 125°C .
V
R
= 20V
mA
I
RM
Max. Reverse Leakage current
T
J
= 25°C
T
J
= 125°C
C
t
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
pF
V
R
= 5Vdc ( 100kHz to 1 MHz) 25°C
Schottky Diode Electrical Specifications
V
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IRF7324D1PBF 功能描述:MOSFET 20V FETKY 12 VGS 270 RDS 2.7VmOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7324D1TR 功能描述:MOSFET P-CH 20V 2.2A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:FETKY™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRF7324D1TRPBF 功能描述:MOSFET MOSFT PCh w/Schttky -2.2A 270mOhm 5.2nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7324PBF 功能描述:MOSFET DUAL -20V P-CH 12 VGS MAX RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7324TR 制造商:International Rectifier 功能描述:Dual P-Channel 20 V 2 W 42 nC Hexfet Power Mosfet Surface Mount - SOIC-8
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