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参数资料
| 型号： | IRF7341PBF |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 2/7页 |
| 文件大小： | 168K |
| 代理商： | IRF7341PBF |
IRF7341PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
55
–––
––– 0.059 –––
––– 0.043 0.050
––– 0.056 0.065
1.0
–––
7.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
24
–––
2.3
–––
7.0
–––
8.3
–––
3.2
–––
32
–––
13
–––
740
–––
190
–––
71
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 4.7A
V
GS
= 4.5V, I
D
= 3.8A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 10V, I
D
= 4.5A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 55°C
V
GS
= -20V
V
GS
= 20V
I
D
= 4.5A
V
DS
= 44V
V
GS
= 10V, See Fig. 10
V
DD
= 28V
I
D
= 1.0A
R
G
= 6.0
R
D
= 16
,
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 9
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
2.0
25
-100
100
36
3.4
10
12
4.8
48
20
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.0A
di/dt = -100A/μs
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
60
120
1.2
90
170
V
ns
nC
Source-Drain Ratings and Characteristics
!"
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
4.7A, di/dt
≤
220A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
Starting T
J
= 25°C, L = 6.5mH
R
G
= 25
, I
AS
= 4.7A. (See Figure 8)
When mounted on 1 inch square copper board, t<10 sec
S
D
G
相关PDF资料 |
PDF描述 |
|---|---|
| IRF7342 | Power MOSFET |
| IRF7343PBF | HEXFET Power MOSFET |
| IRF7350 | Power MOSFET(Vdss=+-100V) |
| IRF7353D1 | 30V N-Channel PowerTrench MOSFET |
| IRF7353D2 | 30V N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7341Q | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC 制造商:International Rectifier 功能描述:MOSFET |
| IRF7341QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7341QTR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R |
| IRF7341QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7341TR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 4.7A 8-Pin SOIC T/R |
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