参数资料
型号: IRF820
厂商: Vishay Siliconix
文件页数: 3/9页
文件大小: 0K
描述: MOSFET N-CH 500V 2.5A TO-220AB
标准包装: 1,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 500V
电流 - 连续漏极(Id) @ 25° C: 2.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 3 欧姆 @ 1.5A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 24nC @ 10V
输入电容 (Ciss) @ Vds: 360pF @ 25V
功率 - 最大: 50W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: *IRF820
IRF820IR
IRF820, SiHF820
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
V GS
Top 15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
10 0
150 ° C
25 ° C
10 0
4.5 V
10 -1
20 μs Pulse Width
20 μs Pulse Width
10 -1
T C = 25 °C
V DS = 50 V
10 0
10 1
4
5
6
7
8
9
10
91059_01
V DS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T C = 25 °C
91059_03
V GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Top
V GS
15 V
10 V
3.0
2.5
I D = 2.1 A
V GS = 10 V
8.0 V
7.0 V
6.0 V
2.0
10 0
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
1.5
1.0
0.5
20 μs Pulse Width
10 -1
10 0
10 1
T C = 150 °C
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
91059_02
V DS, Drain-to-Source Voltage (V)
91059_04
T J, Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, T C = 150 °C
Document Number: 91059
S11-0507-Rev. C, 21-Mar-11
Fig. 4 - Normalized On-Resistance vs. Temperature
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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