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参数资料
| 型号： | IRF8714GPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 14A 8-SOIC |
| 标准包装： | 95 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 14A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.7 毫欧 @ 14A，10V |
| Id 时的 Vgs(th)（最大）： | 2.35V @ 25µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1020pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 管件 |
PD - 96263
IRF8714GPbF
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook
V DSS
HEXFET ? Power MOSFET
R DS(on) max Qg
l
Processor Power
Control MOSFET for Isolated DC-DC
30V
8.7m @V GS = 10V 8.1nC
Converters in Networking Systems
Benefits
A
l
l
l
l
l
l
Very Low Gate Charge
Very Low R DS(on) at 4.5V V GS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
20V V GS Max. Gate Rating
100% tested for Rg
S
S
S
G
1
2
3
4
8
7
6
5
Top View
A
D
D
D
D
SO-8
l
l
Lead-Free
Halogen-Free
Description
The IRF8714GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8714GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for Notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
30
± 20
14
11
110
2.5
1.6
0.02
-55 to + 150
V
A
W
W/°C
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JL
R θ JA
Junction-to-Drain Lead
Junction-to-Ambient
–––
–––
20
50
°C/W
Notes ? through ? are on page 9
www.irf.com
1
07/10/09
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相关代理商/技术参数 |
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| IRF8714GTRPBF | 功能描述:MOSFET MOSFT 30V 14A 8.7mOhm 8.1nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF8714PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 8.7mOhms 8.1nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF8714TRPBF | 功能描述:MOSFET MOSFT 30V 14A 8.7mOhm 8.1nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF8721GPBF | 功能描述:MOSFET HEXFET 30V VDSS 8.5mOhm 10V 8.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF8721GTRPBF | 功能描述:MOSFET MOSFT 30V 14A 8.5mOhm 8.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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