参数资料
型号: IRF9204PBF
厂商: International Rectifier
文件页数: 5/7页
文件大小: 0K
描述: MOSFET P-CH 40V 74A TO-220AB
产品变化通告: Product Discontinuation 08/Jul/2011
产品目录绘图: TO-220AB
标准包装: 50
系列: HEXFET®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 56A
开态Rds(最大)@ Id, Vgs @ 25° C: 16 毫欧 @ 37A,10V
Id 时的 Vgs(th)(最大): 3V @ 100µA
闸电荷(Qg) @ Vgs: 224nC @ 10V
输入电容 (Ciss) @ Vds: 7676pF @ 25V
功率 - 最大: 143W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
IRF9204PbF
1200
ID
3.0
1000
800
TOP -9.66A
-16.7A
BOTTOM -37A
2.5
600
400
200
0
2.0
1.5
1.0
I D = 1.0A
I D = 1.0mA
I D = 250uA
ID = 150uA
ID = 100uA
25
50
75
100
125
150
175
-75 -50 -25
0
25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. Drain Current
1000
Duty Cycle = Single Pulse
100
0.01
0.05
T J , Temperature ( °C )
Fig 13. Threshold Voltage Vs. Temperature
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Δ Tj = 150°C and
Tstart =25°C (Single Pulse)
10
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
300
250
200
150
100
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = -37A
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax . This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. P D (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I av = Allowable avalanche current.
50
0
25
50
75
100
125
150
175
7. Δ T = Allowable rise in junction temperature, not to exceed
T jmax (assumed as 25°C in Figure 14, 15).
t av = Average time in avalanche.
D = Duty cycle in avalanche = t av ·f
Z thJC (D, t av ) = Transient thermal resistance, see figure 11)
Starting T J , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy Vs. Temperature
www.irf.com
P D (ave) = 1/2 ( 1.3·BV·I av ) = D T/ Z thJC
I av = 2 D T/ [1.3·BV·Z th ]
E AS (AR) = P D (ave) ·t av
5
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