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参数资料
| 型号： | IRF9Z20PBF |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 50V 9.7A TO-220AB |
| 产品目录绘图： | IR(F,L)x Series Side 1 IR(F,L)x Series Side 2 |
| 标准包装： | 1,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 280 毫欧 @ 5.6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 480pF @ 25V |
| 功率 - 最大： | 40W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1528 (CN2011-ZH PDF) |
| 其它名称： | *IRF9Z20PBF |
IRF9Z20, SiHF9Z20
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thCS
R thJC
TYP.
-
1.0
-
MAX.
80
-
3.1
UNIT
°C/W
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = - 250 μA
V DS = V GS , I D = - 250 μA
V GS = ± 20 V
V DS = max. rating, V GS = 0 V
V DS = max. rating x 0,8, V GS = 0 V, T J =125°C
- 50
- 2.0
-
-
-
-
-
-
-
-
-
- 4.0
± 500
- 250
- 1000
V
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = - 10 V
I D = - 5.6 A b
-
0.20
0.28
?
Forward Transconductance
g fs
V DS = 2 x V GS , I DS = - 5.6
A b
2.3
3.5
-
S
Dynamic
Input Capacitance
C iss
V GS = 0 V,
-
480
-
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C oss
C rss
Q g
V DS = - 25 V,
f = 1.0 MHz, see fig. 9
-
-
-
320
58
17
-
-
26
pF
Gate-Source Charge
Q gs
V GS = - 10 V
I D = - 9.7 A, V DS = - 0.8
max. rating. see fig. 17
-
4.1
6.2
nC
Gate-Drain Charge
Q gd
-
5.7
8.6
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t d(on)
t r
t d(off)
t f
V DD = - 25 V, I D = - 9.7 A,
R g = 18 ? , R D = 2.4 ?? , see fig. 16
(MOSFET switching times are
essentially independent of operating
temperature)
-
-
-
-
8.2
57
12
25
12
86
18
38
ns
Internal Drain Inductance
L D
Between lead,
6 mm (0.25") from
D
-
4.5
-
package and center
G
nH
Internal Source Inductance
L S
of die contact
S
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
- 9.7
- 39
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V SD
t rr
Q rr
T J = 25 °C, I S = - 9.7 A, V GS = 0 V b
T J = 25 °C, I F = - 9.7 A, dI/dt = 100 A/μs b
-
56
0.17
-
110
0.34
- 6.3
280
0.85
V
ns
μC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width ? 300 μs; duty cycle ? 2 %.
www.vishay.com
2
Document Number: 90121
S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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