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| 型号： | IRFBA1404P |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 206A SUPER-220 |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 206A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.7 毫欧 @ 95A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 200nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7360pF @ 25V |
| 功率 - 最大： | 300W |
| 安装类型： | 通孔 |
| 封装/外壳： | Super-220?-3（直引线） |
| 供应商设备封装： | SUPER-220?（TO-273AA） |
| 包装： | 管件 |
| 其它名称： | *IRFBA1404P |
PD - 93806
AUTOMOTIVE MOSFET
Typical Applications
l Anti-lock Braking Systems (ABS)
IRFBA1404P
HEXFET ? Power MOSFET
l
Electric Power Steering (EPS)
l
l
Electric Braking
Radiator Fan Control
D
V DSS = 40V
Benefits
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Increase Current Handling Capability
175°C Operating Temperature
Fast Switching
Dynamic dv/dt Rating
Repetitive Avalanche Allowed up to Tjmax
G
S
R DS(on) = 3.7m ?
I D = 206A ?
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET ? Power MOSFETs utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175 o C junction operating
temperature, fast switching speed and improved ruggedness in
single and repetitive avalanche. The Super-220 TM is a package that
has been designed to have the same mechanical outline and pinout
as the industry standard TO-220 but can house a considerably
larger silicon die. The result is significantly increased current
handling capability over both the TO-220 and the much larger TO-
247 package. The combination of extremely low on-resistance
silicon and the Super-220 TM package makes it ideal to reduce the
component count in multiparalled TO-220 applications, reduce
system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has been designed
to meet automotive, Q101, qualification standard.
These benefits make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
Absolute Maximum Ratings
Super - 220?
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
206 ?
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
T J
T STG
www.irf.com
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ?
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ?
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
145 ?
650
300
2.0
± 20
See Fig.12a, 12b, 15, 16
30
5.0
-40 to + 175
-55 to + 175
300 (1.6mm from case )
20
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
N
1
10/24/00
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFBA1404PPBF | 功能描述:MOSFET MOSFT 40V 206A 3.7mOhm 160nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFBA1405 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A) |
| IRFBA1405P | 功能描述:MOSFET N-CH 55V 174A SUPER-220 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFBA1405PPBF | 功能描述:MOSFET MOSFT 55V 174A 5mOhm 170nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFBA1405PPBF-ND | 制造商: 功能描述: 制造商:undefined 功能描述: |
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