- 您现在的位置：买卖IC网 > PDF目录377508 > IRFDC20 (International Rectifier) Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=0.32A) PDF资料下载
参数资料
| 型号： | IRFDC20 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=0.32A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）\u003d 4.4ohm，身份证\u003d 0.32A） |
| 文件页数： | 2/8页 |
| 文件大小： | 464K |
| 代理商： | IRFDC20 |
Parameter
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Min. Typ. Max. Units Conditions
600
—
—
—
0.88
—
—
—
4.4
2.0
—
4.0
1.4
—
—
—
—
25
—
—
250
—
—
100
—
—
-100
—
—
18
—
—
3.0
—
—
8.9
—
10
—
—
23
—
—
30
—
—
25
—
—
4.0
—
V
(BR)DSS
V
V
GS
= 0V, ID = 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10.0V, I
D
= 0.19A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 1.3A
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 2.0A
V
DS
= 360V
V
GS
= 10V
V
DD
= 300V
I
D
= 2.0A
R
G
= 18
R
D
= 150
Between lead,
6mm (0.25in.)
from package
and center of
die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V/°C
V
S
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
L
S
Internal Source Inductance
—
6.0
—
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
350
48
8.6
—
—
—
pF
IRFDC20
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units Conditions
I
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 0.32A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.0A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
t
on
—
—
—
—
290
0.67
1.6
580
1.3
V
ns
μC
V
DD
= 50V, starting T
J
= 25°C, L = 54mH
R
G
= 25
, I
AS
= 1.3A.
I
SD
≤
4.4A, di/dt
≤
90A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
—
—
2.6
—
—
0.32
A
μA
nA
ns
nH
Next Data Sheet
Index
Previous Datasheet
To Order
相关PDF资料 |
PDF描述 |
|---|---|
| IRFE210 | HEXFET Transistor(HEXFET 晶体管) |
| IRFE9210 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
| IRFF024 | 60V, N-CHANNEL |
| IRFI064 | TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*) |
| IRFI1010N | N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFDC20PBF | 功能描述:MOSFET N-Chan 600V 0.32 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFE024 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL POWER MOSFET |
| IRFE024SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 6.7A 18PIN LCC - Bulk |
| IRFE024SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 6.7A 18LLCC - Bulk |
| IRFE110 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 3.5A 18-Pin LLCC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 3.5A 18PIN LCC - Bulk 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 100V, 3.5A, LCC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
发布紧急采购，3分钟左右您将得到回复。