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参数资料
| 型号： | IRFF9230 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |
| 中文描述： | 的HEXFET三极管通孔（至205AF） |
| 文件页数： | 3/7页 |
| 文件大小： | 328K |
| 代理商： | IRFF9230 |
4-116
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SM
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier
-
-
-4.0
A
Pulse Source to Drain Current
(Note 3)
-
-
-16
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
C
= 25
o
C, I
SD
= -4.0A, V
GS
= 0V, (Figure 13)
T
J
= 150
o
C, I
SD
= -4.0A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= -4.0A, dI
SD
/dt = 100A/
μ
s
-
-
-1.5
V
Reverse Recovery Time
-
400
-
ns
Reverse Recovery Charge
-
2.6
-
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 46.9mH, R
G
= 25
,
peak I
AS
= 4.0A (Figures 15, 16).
Typical Performance Curves
Unless Otherwise Specified
G
D
S
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
25
75
125
-5
-4
-3
-2
-1
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
10
-3
10
-2
1
10
-5
10
-4
0.01
0.1
10
10
-1
1
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
t
1
t
2
SINGLE PULSE
0.1
0.02
0.2
0.5
0.01
0.05
IRFF9230
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