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参数资料
| 型号： | IRFF9230 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |
| 中文描述： | 的HEXFET三极管通孔（至205AF） |
| 文件页数： | 4/7页 |
| 文件大小： | 328K |
| 代理商： | IRFF9230 |
4-117
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-10
I
D
,
-100
-100
-1
-10
-1
-0.1
-1000
10
μ
s
100
μ
s
1ms
10ms
100ms
DC
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
OPERATION IN THIS AREA
IS LIMITED BY r
DS(ON)
I
D
,
0
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-20
-30
-40
-3
-6
-9
-12
-15
-50
0
V
GS
= -10V
V
GS
= -9V
V
GS
= -7V
V
GS
= -6V
V
GS
= -5V
V
GS
= -4V
80
μ
s PULSE TEST
V
GS
= -8V
0
-3
0
-2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-6
-10
-6
-9
I
D
,
-12
-8
-15
V
GS
= -10V
-9V
PULSE DURATION = 80
μ
s
-6V
-8V
-5V
-4V
-7V
-15
-12
-9
-6
-3
0
0
-2
V
GS
, GATE TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
PULSE DURATION = 80
μ
s
V
DS
≥
I
D(ON)
x r
DS(ON)
MAX
I
D
,
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
1.2
-5
-10
-15
-20
r
D
,
I
D
, DRAIN CURRENT (A)
-25
1.6
0
0.4
0.8
V
GS
= -20V
PULSE DURATION = 2
μ
s
2.0
V
GS
= -10V
O
)
N
2.5
1.5
1.0
0.5
0
-40
0
T
J
, JUNCTION TEMPERATURE (
o
C)
40
120
2.0
80
V
GS
= -10V, I
D
= -2A
160
O
IRFF9230
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