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参数资料
| 型号： | IRFL024 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.075ohm，身份证\u003d 2.8A） |
| 文件页数： | 1/8页 |
| 文件大小： | 110K |
| 代理商： | IRFL024 |
IRFL024N
HEXFET
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.075
I
D
= 2.8A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
6/15/99
Description
l
Surface Mount
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
Fast Switching
l
Fully Avalanche Rated
SOT-223
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
Parameter
Typ.
90
50
Max.
120
60
Units
R
θ
JA
R
θ
JA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Thermal Resistance
°C/W
Parameter
Max.
4.0
2.8
2.3
11.2
2.1
1.0
8.3
± 20
214
2.8
0.1
5.0
-55 to + 150
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V**
Continuous Drain Current, V
GS
@ 10V*
Continuous Drain Current, V
GS
@ 10V*
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
*
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Absolute Maximum Ratings
A
1
PD - 91861A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFL024N | 功能描述:MOSFET N-CH 55V 2.8A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFL024NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 4A 4-Pin(3+Tab) SOT-223 |
| IRFL024NPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFL024NTR | 功能描述:MOSFET N-CH 55V 2.8A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFL024NTRPBF | 功能描述:MOSFET MOSFT 55V 4A 75mOhm 12.2nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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