收藏本站
参数资料
型号： IRFN250SMD
英文描述： N-Channel Power MOSFET(Vdss:200V,Id(cont):14A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):14A,Rds(on):0.100Ω))
中文描述： N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）：14A条的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本：200伏，身份证（续）：14A条的Rds（on） ：0.100Ω））
文件页数： 2/2页
文件大小： 23K
代理商： IRFN250SMD
IRFN250SMD
Prelim. 7/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 14A
I
D
= 22A
I
D
= 250
m
A
I
DS
= 14A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 22A
V
DS
= 0.5BV
DSS
I
D
= 22A
V
DD
= 100V
I
D
= 22A
R
G
= 2.35
W
I
S
= 22A
V
GS
= 0
I
F
= 22A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate – Source Charge
1
Gate – Drain (“Miller”) Charge
1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
200
0.29
0.100
0.105
4
2
9
25
250
100
–100
3500
700
110
55
115
8
22
60
35
190
170
130
30
22
88
1.9
950
9.0
Negligible
0.8
2.8
V
V/°C
W
V
S
(
(
W
)
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from centre of drain pad to die)
Internal Source Inductance
(from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS
相关PDF资料
PDF描述
IRFN250 POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.100ohm, Id=27.4A)
IRFN250SMD N-CHANNEL POWER MOSFET
IRFN340SMD N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
IRFN340 POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=10A)
IRFN340SMD N-CHANNEL POWER MOSFET
相关代理商/技术参数
参数描述
IRFN340 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 10A 3SMD-1 - Bulk
IRFN340SMD 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL POWER MOSFET
IRFN350 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 14A 3SMD-1 - Bulk 制造商:International Rectifier 功能描述:hexfet 400V, 14A, 0.315 ohm 制造商:International Rectifier 功能描述:HEXFET, HiRel
IRFN3710 制造商:IRF 制造商全称:International Rectifier 功能描述:TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A)
IRFN440 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 8A 3SMD-1 - Bulk
发布紧急采购，3分钟左右您将得到回复。