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参数资料
型号： IRFN340SMD
英文描述： N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
中文描述： N沟道功率MOSFET（BVdss：为400V，ID已（续）：10A条的Rds（on）：0.55Ω）（不适用马鞍山沟道功率场效应管（BVdss：为400V，ID已（续）：10A条的Rds（on） ：0.55Ω））
文件页数： 1/2页
文件大小： 23K
代理商： IRFN340SMD
IRFN340SMD
Prelim. 7/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk
V
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Energy
1
Repetitive Avalanche Energy
1
Peak Diode Recovery
3
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
E
AS
I
AR
E
AR
dv/dt
T
J
, T
stg
T
L
R
q
JC
R
q
J–PCB
±20V
10A
6A
40A
125W
1.0W/°C
650mJ
10A
12.5mJ
4.0V/ns
–55 to 150°C
300°C
1.0°C/W
TBD
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
SMD1 PACKAGE
Pad 2 – Drain
Notes
1) Repetitive Rating – Pulse width limited by maximum junction temperature.
2) @ V
DD
= 50V,Starting T
J
= 25°C, E
AS
=[0.5 * L* (I
L2
) * [BV
DSS
/(BV
DSS
-V
DD
)], Peak I
L
= 10A V
GS
= 10V,
2)
25
￡
R
G
￡
200
W
3) I
SD
￡
10A , di/dt
￡
120A/
m
s , V
DD
￡
BV
DSS
, T
J
￡
150°C
4) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
N–CHANNEL
POWER MOSFET
FEATURES
HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
HIGH PACKING DENSITIES
Pad 1 – Source
Pad 3 – Gate
Note:
IRFxxxSM also available with
pins 1 and 3 reversed.
BV
DSS
I
D(cont)
R
DS(on)
400V
10A
0.55
W
相关PDF资料
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IRFN340 POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=10A)
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IRFN9140 POWER MOSFET N-CHANNEL(BVdss=-100V, Rds(on)=0.20ohm, Id=-18A)
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