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参数资料
| 型号： | IRFR1N60ATRRPBF |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 1.4A DPAK |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 欧姆 @ 840mA，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 229pF @ 25V |
| 功率 - 最大： | 36W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
www.vishay.com
THERMAL RESISTANCE RATINGS
Vishay Siliconix
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount) a
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJA
R thJC
TYP.
-
-
-
MAX.
110
50
3.5
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V GS = ± 30 V
V DS = 600 V, V GS = 0 V
V DS = 480 V, V GS = 0 V, T J = 150 °C
600
2.0
-
-
-
-
-
-
-
-
-
4.0
± 100
25
250
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 0.84 A b
-
-
7.0
?
Forward Transconductance
g fs
V DS = 50 V, I D = 0.84 A
0.88
-
-
S
Dynamic
Input Capacitance
Output Capacitance
C iss
C oss
V GS = 0 V,
V DS = 25 V,
-
-
229
32.6
-
-
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
C rss
C oss
C oss eff.
Q g
f = 1.0 MHz, see fig. 5
V DS = 1.0 V, f = 1.0 MHz
V GS = 0 V V DS = 480 V, f = 1.0 MHz
V DS = 0 V to 480 V c
-
-
-
-
-
2.4
320
11.5
130
-
-
-
-
-
14
pF
Gate-Source Charge
Q gs
V GS = 10 V
I D = 1.4 A, V DS = 400 V,
see fig. 6 and 13 b
-
-
2.7
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
-
9.8
8.1
-
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 250 V, I D = 1.4 A,
R g = 2.15 ? , R D = 178 ? , see fig. 10 b
-
-
-
14
18
20
-
-
-
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
1.4
5.6
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V SD
t rr
Q rr
T J = 25 °C, I S = 1.4 A, V GS = 0 V b
T J = 25 °C, I F = 1.4 A, dI/dt = 100 A/μs b
-
-
-
-
290
510
1.6
440
760
V
ns
μC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ? 300 μs; duty cycle ? 2 %.
c. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80 % V DS .
S13-0171-Rev. D, 04-Feb-13
2
Document Number: 91267
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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