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参数资料
| 型号： | IRFR310TRLPBF |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 400V 1.7A DPAK |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 400V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.6 欧姆 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 170pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
IRFR310, IRFU310, SiHFR310, SiHFU310
www.vishay.com
PRODUCT SUMMARY
Power MOSFET
FEATURES
? Dynamic dV/dt Rating
Vishay Siliconix
V DS (V)
400
?
Repetitive Avalanche Rated
R DS(on) ( ? )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
V GS = 10 V
12
1.9
6.5
Single
3.6
?
?
?
?
?
?
Surface Mount (IRFR310, SiHFR310)
Straight Lead (IRFU310, SiHFU310)
Available in Tape and Reel
Fast Switching
Fully Avalanche Rated
Material categorization: For definitions of
D
compliance please see www.vishay.com/doc?99912
DPAK
(TO-252)
D
D
IPAK
(TO-251)
G
DESCRIPTION
Third generation power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
S
G
D S
S
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
N-Channel MOSFET
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252)
SiHFR310-GE3
IRFR310PbF
SiHFR310-E3
DPAK (TO-252)
SiHFR310TRL-GE3
IRFR310TRLPbF a
SiHFR310TL-E3 a
DPAK (TO-252)
SiHFR310TR-GE3
IRFR310TRPbF a
SiHFR310T-E3 a
DPAK (TO-252)
SiHFR310TRR-GE3
IRFR310TRRPbF a
SiHFR310TR-E3 a
IPAK (TO-251)
SiHFU310-GE3
IRFU310PbF
SiHFU310-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
400
± 20
UNIT
V
Continuous Drain Current
Current a
Pulsed Drain
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
I DM
1.7
1.1
6.0
A
Linear Derating Factor
Linear Derating Factor (PCB Mount) e
0.20
0.020
W/°C
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation T C = 25 °C
Maximum Power Dissipation (PCB Mount) e T A = 25 °C
Peak Diode Recovery dV/dt c
E AS
I AR
E AR
P D
dV/dt
86
1.7
2.5
25
2.5
4.0
mJ
A
mJ
W
V/ns
Operating Junction and Storage Temperature Range T J , T stg
Soldering Recommendations (Peak Temperature) d for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = 50 V, starting T J = 25 °C, L = 52 mH, R g = 25 ? , I AS = 1.7 A (see fig. 12).
c. I SD ? 1.7 A, dI/dt ? 40 A/μs, V DD ? V DS , T J ? 150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
- 55 to + 150
260
°C
S13-0165-Rev. D, 04-Feb-13
1
Document Number: 91272
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFR310TRLPBFA | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET |
| IRFR310TRPBF | 功能描述:MOSFET N-Chan 400V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR310TRPBFA | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET |
| IRFR310TRR | 功能描述:MOSFET N-CH 400V 1.7A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFR310TRRPBF | 功能描述:MOSFET N-Chan 400V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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