参数资料
型号: IRFR3418TRPBF
厂商: International Rectifier
文件页数: 1/11页
文件大小: 0K
描述: MOSFET N-CH 80V 70A DPAK
标准包装: 2,000
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 80V
电流 - 连续漏极(Id) @ 25° C: 70A
开态Rds(最大)@ Id, Vgs @ 25° C: 14 毫欧 @ 18A,10V
Id 时的 Vgs(th)(最大): 5.5V @ 250µA
闸电荷(Qg) @ Vgs: 94nC @ 10V
输入电容 (Ciss) @ Vds: 3510pF @ 25V
功率 - 最大: 3.8W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 带卷 (TR)
PD - 95516A
IRFR3418PbF
IRFU3418PbF
HEXFET ? Power MOSFET
Applications
l High frequency DC-DC converters
V DSS
R DS(on) Max
I D
l
Lead-Free
80V
14m
30A
Benefits
l
l
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C OSS to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
D-Pak
IRFR3418
Max.
I-Pak
IRFU3418
Units
V DS
V GS
I D @ T C = 25°C
I D @ T C = 100°C
I DM
P D @T C = 25°C
P D @T A = 25°C
dv/dt
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
80
± 20
70
50
280
140
3.8
0.95
5.2
-55 to + 175
300 (1.6mm from case )
V
A
W
W/°C
V/ns
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
1.05
R θ JA
R θ JA
Junction-to-Ambient (PCB Mount) *
Junction-to-Ambient
–––
–––
40
110
°C/W
Notes ? through ? are on page 10
www.irf.com
1
12/03/04
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