参数资料
型号: IRFR3418TRPBF
厂商: International Rectifier
文件页数: 10/11页
文件大小: 0K
描述: MOSFET N-CH 80V 70A DPAK
标准包装: 2,000
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 80V
电流 - 连续漏极(Id) @ 25° C: 70A
开态Rds(最大)@ Id, Vgs @ 25° C: 14 毫欧 @ 18A,10V
Id 时的 Vgs(th)(最大): 5.5V @ 250µA
闸电荷(Qg) @ Vgs: 94nC @ 10V
输入电容 (Ciss) @ Vds: 3510pF @ 25V
功率 - 最大: 3.8W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 带卷 (TR)
IRFR/U3418PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature.
? Starting T J = 25°C, L = 1.6mH
R G = 25 ? , I AS = 18A.
? I SD ≤ 18A, di/dt ≤ 350A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C.
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? C oss eff. is a fixed capacitance that gives the same charging time
as C oss while V DS is rising from 0 to 80% V DSS
? Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information . 12/04
10
www.irf.com
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