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参数资料
| 型号： | IRFR310TRLPBF |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 400V 1.7A DPAK |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 400V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.6 欧姆 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 170pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
IRFR310, IRFU310, SiHFR310, SiHFU310
www.vishay.com
THERMAL RESISTANCE RATINGS
Vishay Siliconix
PARAMETER
Maximum Junction-to-Ambient
(PCB Mounted, steady-state) a
Maximum Junction-to-Ambient
Maximum Junction-to-Case
SYMBOL
R thJA
R thJA
R thJC
TYP.
-
-
-
MAX.
50
110
5.0
UNIT
°C/W
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
? V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μA
Reference to 25 °C, I D = 1 mA
V DS = V GS , I D = 250 μA
V GS = ± 20 V
V DS = 400 V, V GS = 0 V
V DS = 320 V, V GS = 0 V, T J = 125 °C
400
-
2.0
-
-
-
-
0.47
-
-
-
-
-
-
4.0
± 100
25
250
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 1.0 A b
-
-
3.6
?
Forward Transconductance
g fs
V DS = 50 V, I D = 1.0
A b
0.97
-
-
S
Dynamic
Input Capacitance
C iss
V GS = 0 V,
-
170
-
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C oss
C rss
Q g
V DS = 25 V,
f = 1.0 MHz, see fig. 5 c
-
-
-
34
6.3
-
-
-
12
pF
Gate-Source Charge
Q gs
V GS = 10 V
I D = 2.0 A, V DS = 320 V,
see fig. 6 and 13 b, c
-
-
1.9
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
-
7.9
6.5
-
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 200 V, I D = 2.0 A,
R g = 24 ? , R D = 95 ? ,
see fig. 10 b, c
-
-
-
9.9
21
11
-
-
-
ns
Internal Drain Inductance
Internal Source Inductance
L D
L S
Between lead,
6 mm (0.25") from
package and center of
die contact
G
D
S
-
-
4.5
7.5
-
-
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
1.7
6.0
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V SD
t rr
Q rr
T J = 25 °C, I S = 1.7 A, V GS = 0 V b
T J = 25 °C, I F = 2.0 A, dI/dt = 100 A/μs b
-
-
-
-
240
0.85
1.6
540
1.6
V
ns
μC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ? 300 μs; duty cycle ? 2 %.
S13-0165-Rev. D, 04-Feb-13
2
Document Number: 91272
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFR310TRLPBFA | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET |
| IRFR310TRPBF | 功能描述:MOSFET N-Chan 400V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR310TRPBFA | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET |
| IRFR310TRR | 功能描述:MOSFET N-CH 400V 1.7A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFR310TRRPBF | 功能描述:MOSFET N-Chan 400V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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