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参数资料
| 型号： | IRFR214 |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 2.0ohm，身份证\u003d 2.2a在） |
| 文件页数： | 2/6页 |
| 文件大小： | 52K |
| 代理商： | IRFR214 |
4-384
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFR214, IRFU214
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250
V
250
V
2.2
1.4
A
A
8.8
A
±
20
V
25
W
0.20
W/
o
C
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
as
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
61
mJ
o
C
-55 to 150
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
o
C TO 125
o
C
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
250
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
μ
A
V
DS
=0.8 x Rated BV
DSS
, V
GS
= 0V
T
J
= 150
o
C
-
-
250
μ
A
On-State Drain Current
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
2.2
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance (Note 4)
r
DS(ON)
I
D
= 1.3A, V
GS
= 10V (Figure 8)
-
1.6
2.000
Forward Transconductance (Note 4)
g
fs
V
DS
=
≥
50V, I
DS
= 1.3A
1.1
-
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 0.5 x Rated BV
DSS
, I
D
≈
2.7A, R
GS
= 24
,
R
L
= 4.5
, V
GS
= 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
7.0
-
ns
Rise Time
t
r
-
7.6
-
ns
Turn-Off Delay Time
t
d(OFF)
-
16
-
ns
Fall Time
t
f
-
7.0
-
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 10V, I
D
≈
5.6A, V
DS
= 0.8 x Rated BV
DSS
,
(Figure 11)
Gate Charge is Essentially Independent of Oper-
ating Temperature
-
-
10
nC
Gate to Source Charge
Q
gs
-
-
1.8
nC
Gate to Drain “Miller” Charge
Q
gd
-
-
5.5
nC
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz
(Figure 9)
-
140
-
pF
Output Capacitance
C
OSS
-
42
-
pF
Reverse Transfer Capacitance
C
RSS
-
9.6
-
pF
IRFR214, IRFU214
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