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参数资料
| 型号： | IRFU3303 |
| 厂商： | International Rectifier |
| 英文描述： | N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) |
| 中文描述： | N沟道HEXFET功率MOSFET的（不适用沟道的HEXFET功率马鞍山场效应管） |
| 文件页数： | 1/10页 |
| 文件大小： | 112K |
| 代理商： | IRFU3303 |
IRFR/U3303
HEXFET
Power MOSFET
V
DSS
= 30V
R
DS(on)
= 0.031
I
D
= 33A
8/25/97
Parameter
Typ.
–––
–––
–––
Max.
2.2
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
Thermal Resistance
D-Pak
TO-252A A
I-Pak
TO-251AA
l
Ultra Low On-Resistance
l
Surface Mount (IRFR3303)
l
Straight Lead (IRFU3033)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
Parameter
Max.
33
21
120
57
0.45
± 20
95
18
5.7
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
S
D
G
PD - 9.1642A
相关PDF资料 |
PDF描述 |
|---|---|
| IRFR3411 | HEXFET Power MOSFET |
| IRFR3411PBF | HEXFET Power MOSFET |
| IRFU3411PBF | HEXFET Power MOSFET |
| IRFR3412 | SMPS MOSFET |
| IRFU3412 | SMPS MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFU3303PBF | 功能描述:MOSFET MOSFT 30V 33A 31mOhm 29nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFU3303PBF | 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes |
| IRFU330A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-251AA |
| IRFU330B | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:400V N-Channel MOSFET |
| IRFU330BTU | 功能描述:MOSFET 400V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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