参数资料
型号: IRFR214
厂商: International Rectifier
英文描述: Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)
中文描述: 功率MOSFET(减振钢板基本\u003d 250V,的Rds(on)\u003d 2.0ohm,身份证\u003d 2.2a在)
文件页数: 4/6页
文件大小: 52K
代理商: IRFR214
4-386
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS (T
C
= 25
o
C)
FIGURE 6. OUTPUT CHARACTERISTICS (T
C
= 150
o
C)
FIGURE 7. TRANSFER CHARACTERISTICS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
0.1
1
0.01
10
0.1
1
10
-4
10
Z
θ
J
,
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
SINGLE PULSE
0.5
0.2
0.1
0.05
0.01
0.02
T
100
μ
s
1ms
10ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
100
10
1.0
0.1
1
10
100
1000
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
OPERATION IN THIS
AREA LIMITED
BY r
DS(ON)
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
-1
10
0
10
1
10
0
10
-1
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 15V
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5.5V
V
GS
= 5V
V
GS
= 4.5V
TOP
BOTTOM
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
-1
10
0
10
1
10
0
10
-1
V
GS
= 15V
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5.5V
V
GS
= 5V
V
GS
= 4.5V
TOP
BOTTOM
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 150
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
10
1
0.1
10
-2
4
5
6
10
7
8
9
10
-3
T
J
= 150
o
C
T
J
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
=
50V
IRFR214, IRFU214
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