- 您现在的位置：买卖IC网 > PDF目录384497 > IRFR3505 (International Rectifier) AUTOMOTIVE MOSFET PDF资料下载
参数资料
| 型号： | IRFR3505 |
| 厂商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽车MOSFET的 |
| 文件页数： | 2/11页 |
| 文件大小： | 587K |
| 代理商： | IRFR3505 |
2
www.irf.com
Parameter
Min. Typ. Max. Units
55
–––
–––
0.057 –––
–––
0.011 0.013
2.0
–––
41
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
62
–––
17
–––
22
–––
13
–––
74
–––
43
–––
54
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 30A
V
DS
= 10V, I
D
= 250μA
V
DS
= 25V, I
D
= 30A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 30A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 30A
R
G
= 6.8
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
4.0
–––
20
250
200
-200
93
26
33
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
2030
470
91
2600
330
630
–––
–––
–––
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 30A, V
DD
= 28V
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
70
180
1.3
105
270
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
71
280
Notes
through
are on page 11
相关PDF资料 |
PDF描述 |
|---|---|
| IRFU3505 | AUTOMOTIVE MOSFET |
| IRFR3518 | HEXFET Power MOSFET |
| IRFU3518 | HEXFET Power MOSFET |
| IRFR3704Z | CONN RGT ANGLE HDR 12 |
| IRFU3704Z | HEXFET Power MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFR3505HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 71A 3-Pin(2+Tab) DPAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 71A 3PIN DPAK - Bulk |
| IRFR3505PBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 13mOhms 62nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR3505TRHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 71A 3PIN DPAK - Tape and Reel |
| IRFR3505TRLHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 71A 3PIN DPAK - Tape and Reel |
| IRFR3505TRLPBF | 制造商:International Rectifier 功能描述:MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.011Ohm;ID 30A;D-Pak (TO-252AA);PD 140W 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 71A 3PIN DPAK - Tape and Reel |
发布紧急采购，3分钟左右您将得到回复。