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参数资料
| 型号： | IRFU3505 |
| 厂商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽车MOSFET的 |
| 文件页数： | 1/11页 |
| 文件大小： | 587K |
| 代理商： | IRFU3505 |
IRFR3505
IRFU3505
HEXFET
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.013
I
D
= 30A
www.irf.com
1
D-Pak
IRFR3505 IRFU3505
I-Pak
Parameter
Typ.
–––
–––
–––
Max.
1.09
40
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
Thermal Resistance
AUTOMOTIVE MOSFET
Specifically designed for Automotive applications, this HEXFET
Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this product are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating. These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor phase, infrared,
or wave soldering techniques. The straight lead version (IRFU series) is
for through-hole mounting applications. Power dissipation levels up to
1.5 watts are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS
Single Pulse Avalanche Energy
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Description
●
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
●
●
●
●
Features
Max.
Units
71
49
30
280
140
0.92
± 20
210
410
A
W
W/°C
V
mJ
See Fig.12a, 12b, 15, 16
A
mJ
V/ns
4.0
-55 to + 175
°C
300 (1.6mm from case )
PD - 94506A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFU3505PBF | 功能描述:MOSFET N-CH 55V 30A I-PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFU3518 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRFU3518-701PBF | 功能描述:MOSFET N-CH 80V 38A IPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFU3518PBF | 制造商:International Rectifier 功能描述:MOSFET N 100V 38A I-PAK |
| IRFU3607-701PBF | 制造商:International Rectifier 功能描述:MOSFET, 75V, 80A, 9.0 MOHM, 56 NC QG, I-PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N CH 75V 56A IPAK 制造商:International Rectifier 功能描述:MOSFET, 75V, 80A, 9 Ohm, 56 nC Qg, I-Pak |
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