参数资料
型号: IRFR3518
厂商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件页数: 1/10页
文件大小: 555K
代理商: IRFR3518
www.irf.com
1
09/23/02
IRFR3518
IRFU3518
HEXFET Power MOSFET
R
DS(on)
max
29m
V
DSS
80V
I
D
30A
Parameter
Max.
80
± 20
38
27
150
110
0.71
5.2
Units
V
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V/ns
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes
through are on page 10
Applications
High frequency DC-DC converters
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3518
I-Pak
IRFU3518
Parameter
Typ.
–––
–––
–––
Max.
1.4
40
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
Thermal Resistance
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