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参数资料
| 型号： | IRFR3518 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 2/10页 |
| 文件大小： | 555K |
| 代理商： | IRFR3518 |
2
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Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
g
fs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
C
oss
eff.
Effective Output Capacitance
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.09 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
V
GS(th)
Gate Threshold Voltage
2.0
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Min. Typ. Max. Units
80
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
24
–––
–––
–––
–––
–––
29
4.0
20
250
200
-200
m
V
V
GS
= 10V, I
D
= 18A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 80V, V
GS
= 0V
V
DS
= 64V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
μA
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
Min. Typ. Max. Units
34
–––
––– 37 56 I
D
= 18A
–––
11
–––
–––
12
–––
–––
12
–––
–––
25
–––
–––
37
–––
–––
13
–––
–––
1710 –––
–––
270
–––
–––
33
–––
–––
1780 –––
–––
170
–––
–––
330
–––
Conditions
V
DS
= 25V, I
D
= 18A
–––
S
nC
V
DS
= 40V
V
GS
= 10V
V
DD
= 40V
I
D
= 18A
R
G
= 9.1
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 64V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 64V
pF
ns
Parameter
Typ.
–––
–––
–––
Max.
160
18
11
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 18A, V
GS
= 0V
T
J
= 25°C, I
F
= 18A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
77
210
1.3
–––
–––
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
38
150
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