参数资料
型号: IRFR3518
厂商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件页数: 4/10页
文件大小: 555K
代理商: IRFR3518
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
10
20
30
40
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VG
VDS= 40V
VDS= 64V
VDS= 16V
ID= 18A
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 175 C
T = 25 C
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
100000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
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