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参数资料
| 型号： | IRFR3518 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 10/10页 |
| 文件大小： | 555K |
| 代理商： | IRFR3518 |
10
www.irf.com
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.99mH
R
G
= 25
, I
AS
= 18A.
I
SD
≤
18A, di/dt
≤
360A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C.
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer
to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial
market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
09/02
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFR3518HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 80V 38A 3-Pin(2+Tab) DPAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 80V 38A 3PIN DPAK - Bulk |
| IRFR3518PBF | 功能描述:MOSFET 80V 1 N-CH HEXFET 29mOhms 37nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR3518TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 80V 38A 3-Pin(2+Tab) DPAK T/R |
| IRFR3518TRLHR | 制造商:International Rectifier 功能描述:MOSFET, 80V, 38A, 29 MOHM, 37 NC QG, D-PAK - Tape and Reel |
| IRFR3518TRPBF | 功能描述:MOSFET MOSFT 80V 38A 29mOhm 37nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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