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参数资料
| 型号： | IRFR9220 |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 3.6 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件页数： | 1/8页 |
| 文件大小： | 99K |
| 代理商： | IRFR9220 |
4-89
File Number
4015.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRFR9220, IRFU9220
3.6A, 200V 1.500 Ohm, P-Channel Power
MOSFETs
These are advanced power MOSFETs designed, tested, and
guaranteed to withstand a specific level of energy in the
avalanche breakdown mode of operation. These are
P-Channel enhancement-mode silicon gate power field-
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers,
and drivers for high-power bipolar switching transistors
requiring high speed and low gate-drive power. These types
can be operated directly from integrated circuits.
Formerly developmental type TA17502.
Features
3.6A, 200V
r
DS(ON)
= 1.500
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR9220
TO-252AA
IF9220
IRFU9220
TO-251AA
IF9220
NOTE:
to obtain the TO-252AA variant in tape and reel, e.g., IRFR92209A.
Whenorderingusetheentirepartnumber.Addthesuffix9A
G
D
S
JEDEC TO-251AA
JEDEC TO-252AA
GATE
SOURCE
DRAIN
DRAIN (FLANGE)
DRAIN (FLANGE)
GATE
SOURCE
Data Sheet
July 1999
相关PDF资料 |
PDF描述 |
|---|---|
| IRFU9220 | 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
| IRFR9220 | Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A) |
| IRFU9220 | Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A) |
| IRFRU3910 | Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A) |
| IRFR3910 | RECT SCHOTTKY 60V 5A POWERMITE3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFR9220PBF | 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9220T_R4941 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9220TR | 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9220TRL | 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9220TRLPBF | 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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