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参数资料
| 型号： | IRFR9220 |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 3.6 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件页数： | 4/8页 |
| 文件大小： | 99K |
| 代理商： | IRFR9220 |
4-92
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-10
-1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
If R = 0
t
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0
0
-1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-3.0
-4.5
-6.0
-7.5
I
D
,
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
V
GS
= -7V
V
GS
= -10V
-1
-2
-3
-4
V
GS
= -4.5V
-5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= -20V
0
-1
-2
-3
-4
-5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
-55
o
C
150
o
C
25
o
C
-2
-4
-8
-6
-6
-7
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
2.5
PULSE DURATION = 80
μ
s
V
GS
= -10V
I
D
O
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
160
120
T
T
J
, JUNCTION TEMPERATURE (
o
C)
N
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
N
B
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
IRFR9220, IRFU9220
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|---|---|
| IRFU9220 | 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
| IRFR9220 | Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A) |
| IRFU9220 | Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A) |
| IRFRU3910 | Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFR9220PBF | 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9220T_R4941 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9220TR | 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9220TRL | 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9220TRLPBF | 功能描述:MOSFET P-Chan 200V 3.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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